Graphene oxidation: Thickness-dependent etching and strong chemical doping

被引：762

作者：

Liu, Li ^{[1
,2
]}

Ryu, Sunmin ^{[1
,2
]}

Tomasik, Michelle R. ^{[2
]}

Stolyarova, Elena ^{[1
,2
]}

Jung, Naeyoung ^{[1
,2
]}

Hybertsen, Mark S. ^{[3
]}

Steigerwald, Michael L. ^{[1
,2
]}

Brus, Louis E. ^{[1
,2
]}

Flynn, George W. ^{[1
,2
]}

机构：

[1] Columbia Univ, Dept Chem, New York, NY 10027 USA

[2] Columbia Univ, Nanoscale Sci & Engn Ctr, New York, NY 10027 USA

[3] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 07期

关键词：

D O I：

10.1021/nl0808684

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single-layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O-2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of similar to 0.5 eV. These oxygen species desorb partially in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O-2 atmosphere at room temperature. This strongly doped graphene is very different from "graphene oxide" made by mineral acid attack.

引用

页码：1965 / 1970

页数：6

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