High-Performance GeO2/Ge nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

被引：94

作者：

Morii, K. ^{[1
]}

Iwasaki, T. ^{[1
]}

Nakane, R. ^{[1
]}

Takenaka, M. ^{[1
]}

Takagi, S. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 113003, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 10期

关键词：

Gas-phase doping; Ge nMOSFETs; high mobility; HIGH-MOBILITY; INTERFACE; PMOSFETS;

D O I：

10.1109/LED.2010.2061211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We reveal that the MOVPE-based gas-phase doping can yield lower arsenic diffusion constant and lower leakage current n(+)/p junctions in Ge compared with conventional ion-implantation doping. Thus, the gas-phase doping is quite effective for realizing high-performance Ge n-channel MOSFETs. By using gas-phase doping for source/drain junction formation, the (100) GeO2/Ge nMOSFETs have achieved high electron mobility of 1020 cm(2)/V.s while maintaining low junction leakage current and high I-on/I-off ratio of 10(5). Furthermore, the (110) GeO2/Ge nMOSFETs have also shown high electron mobility and high I-on/I-off ratio.

引用

页码：1092 / 1094

页数：3

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