Film/substrate orientation relationship in the AlN/6H-SiC epitaxial system

被引：69

作者：

Stemmer, S

Pirouz, P

Ikuhara, Y

Davis, RF

机构：

[1] JAPAN FINE CERAM CTR,NAGOYA,AICHI 456,JAPAN

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.77.1797

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AIN has been grown on the (0001) basal and (<1(1)over bar 00>) prism faces of 6H-SiC. High resolution transmission electron microscopy studies show that, despite the very different symmetries of these two substrate planes and their polar and nonpolar natures, the film/substrate orientation relationship is identical for both systems. It is shown that this result is consistent with a geometrical method recently proposed for determining the orientation relationship between two crystals in a bicrystal.

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页码：1797 / 1800

页数：4

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