Film/substrate orientation relationship in the AlN/6H-SiC epitaxial system

被引：69

作者：

Stemmer, S

Pirouz, P

Ikuhara, Y

Davis, RF

机构：

[1] JAPAN FINE CERAM CTR,NAGOYA,AICHI 456,JAPAN

[2] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 77卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.77.1797

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AIN has been grown on the (0001) basal and (<1(1)over bar 00>) prism faces of 6H-SiC. High resolution transmission electron microscopy studies show that, despite the very different symmetries of these two substrate planes and their polar and nonpolar natures, the film/substrate orientation relationship is identical for both systems. It is shown that this result is consistent with a geometrical method recently proposed for determining the orientation relationship between two crystals in a bicrystal.

引用

收藏

页码：1797 / 1800

页数：4

相关论文

共 25 条

[11]

IKUHARA Y, 1996, P 7 INT C INT INT BO, V207, P121

[12] ELECTRON-MICROSCOPY CHARACTERIZATION OF GAN FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON SAPPHIRE AND SIC [J].

LILIENTALWEBER, Z ;

SOHN, H ;

NEWMAN, N ;

WASHBURN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1578-1581

[13] A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

LIN, ME ;

SVERDLOV, B ;

ZHOU, GL ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3479-3481

[14] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDIES OF NB/AL2O3 INTERFACES [J].

MAYER, J ;

FLYNN, CP ;

RUHLE, M .

ULTRAMICROSCOPY, 1990, 33 (01) :51-61

[15] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MORITA, M ;

UESUGI, N ;

ISOGAI, S ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :17-23

[16] MICROSTRUCTURE OF GAN EPITAXY ON SIC USING ALN BUFFER LAYERS [J].

PONCE, FA ;

KRUSOR, BS ;

MAJOR, JS ;

PLANO, WE ;

WELCH, DF .

APPLIED PHYSICS LETTERS, 1995, 67 (03) :410-412

[17] MORPHOLOGY OF ORGANOMETALLIC CVD GROWN GAAS EPITAXIAL LAYERS [J].

REEP, DH ;

GHANDHI, SK .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :449-457

[18] EPITAXIAL-GROWTH OF ALN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

ROWLAND, LB ;

KERN, RS ;

TANAKA, S ;

DAVIS, RF .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (09) :2310-2314

[19] SUBSTRATE-POLARITY DEPENDENCE OF METAL-ORGANIC VAPOR-PHASE EPITAXY-GROWN GAN ON SIC [J].

SASAKI, T ;

MATSUOKA, T .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4531-4535

[20] INTERFACE CHEMISTRY AND SURFACE-MORPHOLOGY IN THE INITIAL-STAGES OF GROWTH OF GAN AND ALN ON ALPHA-SIC AND SAPPHIRE [J].

SITAR, Z ;

SMITH, LL ;

DAVIS, RF .

JOURNAL OF CRYSTAL GROWTH, 1994, 141 (1-2) :11-21