EPITAXIAL-GROWTH OF ALN BY PLASMA-ASSISTED, GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：46

作者：

ROWLAND, LB ^{[1
]}

KERN, RS ^{[1
]}

TANAKA, S ^{[1
]}

DAVIS, RF ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF MATERIALS RESEARCH | 1993年 / 8卷 / 09期

关键词：

D O I：

10.1557/JMR.1993.2310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Monocrystalline AlN(0001) films with few defects were deposited on vicinal alpha(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050-1200-degrees-C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900-1050-degrees-C resulted in smooth, highly oriented AlN(0001) films.

引用

页码：2310 / 2314

页数：5

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