Excimer laser crystallization of amorphous indium-tin-oxide and its application to fine patterning

被引：30

作者：

Hosono, H ^{[1
]}

Kurita, M ^{[1
]}

Kawazoe, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10A期

关键词：

indium-tin-oxide; amorphous ITO; crystallization; patterning; excimer lasers;

D O I：

10.1143/JJAP.37.L1119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline indium-tin-oxide (ITO) thin films were prepared at an ambient temperature by irradiation of amorphous (a-) ITO with KrF excimer laser pulses of greater than or equal to 40mJ/cm(2)/pulse. Electrical resistivity of the specimen at similar to 300 K decreased from 5.9 x 10(-4) Omega-cm to 2.7 x 10(-4) Omega.cm upon laser crystallization. Irradiation of a-ITO thin films through a phase-mask led to the formation of a periodic structure composed of a-ITO and crystalline (c-) ITO. The micropattern of c-ITO was successfully formed by the chemical etching of the irradiated specimens, utilizing the large differences in the chemical etching rate between crystallized and amorphous ITOs.

引用

页码：L1119 / L1121

页数：3

共 8 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].