Aerosol deposition method for preparation of lead zirconate titanate thick layer at low temperature - Improvement of electrical properties by irradiation of fast atom beam and plasma

被引：19

作者：

Akedo, J ^{[1
]}

Lebedev, M ^{[1
]}

Baba, S ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058564, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 9B期

关键词：

aerosol deposition; fast atom beam; plasma; PZT; ceramic integration;

D O I：

10.1143/JJAP.42.5931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The improvement of the electrical properties of a lead zirconate titanate (PZT) layer and the reduction of the processing temperature in the aerosol deposition method (ADM) using irradiation of a fast atom beam (FAB) and plasma were investigated. The remanent polarization of the PZT layer deposited with oxygen FAB irradiation on a stainless steel substrate and annealed at 400degreesC for 10 min was 15 muC/cm(2) which is 2 times higher than that without FAB irradiation. The dielectric permittivity (epsilon) at 1 kHz-1 MHz was also improved by 25-45% by FAB irradiation for PZT layers, both as-deposited at room temperature and annealed at up to 400degreesC.

引用

页码：5931 / 5935

页数：5

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