Sol-gel processing of piezoelectric thin films

被引：6

作者：

Abothu, IR ^{[1
]}

Ito, Y

Poosanaas, P

Kalpat, S

Komarneni, S

Uchino, K

机构：

[1] Natl Univ Singapore, IMRE, Singapore 119260, Singapore

[2] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

来源：

FERROELECTRICS | 1999年 / 232卷 / 1-4期

关键词：

sol-gel processing; PZT thin films; MEMS;

D O I：

10.1080/00150199908015791

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lead zirconate titanate, Pb(ZrxTi1-x)O-3 [PZT] rhombohedral thin films with [001] orientation were fabricated by sol-gel spin coating techniques. Using a methoxyethanol based precursor solution and rapid thermal annealing at 700 degreesC for 30 seconds, crack free and homogeneous PZT thin films were successfully obtained. Preferred [001] oriented PZT thin films with x = 0.80 showed a remanent polarization of 28 muC/cm(2) and a coercive field of 17 kV/cm.

引用

页码：1071 / 1075

页数：5

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