X-Gamma indirect intersubband transitions in type II GaAs/AlAs superlattices

被引：5

作者：

Fenigstein, A

Finkman, E

Bahir, G

Schacham, SE

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

[2] COLL JUDEA & SAMARIA,DEPT ELECT & ELECT ENGN,ARIEL,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.117476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intersubband transitions indirect in both real and momentum spaces were observed in GaAs/AlAs type II short period superlattices. Significant absorption of normal incident radiation, with ''forbidden'' polarization was measured, in addition to absorption in the ''allowed'' configuration. The transition energy shows a strong temperature dependence. This absorption is attributed to X-T transition. Both doped and undoped samples were investigated. Normal incidence absorption is stronger for the doped superlattices. Simulations using a two band model show good agreement to experimental data. (C) 1996 American Institute of Physics.

引用

页码：1758 / 1760

页数：3

共 13 条

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