Properties of the phonon gas in ultrathin membranes at low temperature

被引：42

作者：

Anghel, DV ^{[1
]}

Pekola, JP ^{[1
]}

Leivo, MM ^{[1
]}

Suoknuuti, JK ^{[1
]}

Manninen, M ^{[1
]}

机构：

[1] Univ Jyvaskyla, Dept Phys, SF-40351 Jyvaskyla, Finland

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.81.2958

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We analyze heat conduction by phonons in ultrathin membranes by constructing a new theoretical framework which implies a crossover from a bulk three-dimensional phonon distribution into a quasi-two-dimensional distribution when the temperature is lowered. We calculate the corresponding changes in the relevant thermodynamic quantities. At the end we make a comparison to experimental data.

引用

页码：2958 / 2961

页数：4

共 9 条

[1] Measurements of thermal transport in low stress silicon nitride films [J].

Holmes, W ;

Gildemeister, JM ;

Richards, PL ;

Kotsubo, V .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2250-2252

[2] PHONON RADIATIVE HEAT-TRANSFER AND SURFACE SCATTERING [J].

KLITSNER, T ;

VANCLEVE, JE ;

FISCHER, HE ;

POHL, RO .

PHYSICAL REVIEW B, 1988, 38 (11) :7576-7594

[3] Thermal characteristics of silicon nitride membranes at sub-Kelvin temperatures [J].

Leivo, MM ;

Pekola, JP .

APPLIED PHYSICS LETTERS, 1998, 72 (11) :1305-1307

[4] Microrefrigeration by normal-metal/insulator/superconductor tunnel junctions [J].

Leivo, MM ;

Manninen, AJ ;

Pekola, JP .

APPLIED SUPERCONDUCTIVITY, 1997, 5 (7-12) :227-233

[5] HOT-ELECTRON MICROCALORIMETERS AS HIGH-RESOLUTION X-RAY-DETECTORS [J].

NAHUM, M ;

MARTINIS, JM .

APPLIED PHYSICS LETTERS, 1995, 66 (23) :3203-3205

[6]

SARAB K, 1994, VLSI FABRICATION PRI

[7]

WENZ S, 1992, THESIS U CALIFORNIA

[8]

Wolf S., 1986, SILICON PROCESSING V, V1

[9]

ZIMAN JM, 1979, THEORY TRANSPORT PHE

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