Thermal characteristics of silicon nitride membranes at sub-Kelvin temperatures

被引：90

作者：

Leivo, MM ^{[1
]}

Pekola, JP ^{[1
]}

机构：

[1] Univ Jyvaskyla, Dept Phys, SF-40351 Jyvaskyla, Finland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.120979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed calorimetric measurements on 200 nm thin silicon nitride membranes at temperatures from 0.07 to 1 K. Besides full windows, membranes cut into a thermally isolating suspended bridge geometry were investigated. Based on de and ac measurements employing normal-metal/insulator/superconductor (NIS) tunnel junctions both as a thermometer and a heater, we report on heat transport and thermal relaxation in silicon nitride films. The bridge structure improves thermal isolation and, consequently, energy sensitivity by two orders of magnitude over those of the full membrane with the same size, and makes such a structure very attractive for bolometric and microrefrigeration applications. (C) 1998 American Institute of Physics.

引用

页码：1305 / 1307

页数：3

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