RES and channeling analysis of cobalt disilicide layers produced by focused ion beam implantation

被引：5

作者：

Teichert, J ^{[1
]}

Voelskow, M ^{[1
]}

Bischoff, L ^{[1
]}

Hausmann, S ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

VACUUM | 1998年 / 51卷 / 02期

关键词：

D O I：

10.1016/S0042-207X(98)00171-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cobalt disilicide layers were formed by ion beam synthesis using 35 keV Co+ focused ion beam (FIB) implantation into silicon. A strong influence of the pixel dwell-time on the layer formation was found. Only for short pixel dwell-times (about 1 mu s) closed layers with sufficient quality for device application could be formed. To understand the dwell-time effect the as-implanted samples were examined by Rutherford backscattering (RBS) and channeling analysis. A method is presented which allows quantitative measurements of samples where the implanted areas are smaller than the diameter of the RES beam. Evidence has been obtained that the silicon crystal damage is less for short dwell-times. (C) 1998 Elsevier Science Ltd. AII rights reserved.

引用

页码：261 / 266

页数：6

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