Irradiation tests of double-sided silicon strip detectors with a special guard ring structure

被引：9

作者：

Abt, I ^{[1
]}

Andricek, L ^{[1
]}

Bauer, C ^{[1
]}

Fox, H ^{[1
]}

Halley, A ^{[1
]}

Kroha, H ^{[1
]}

Richter, RH ^{[1
]}

Riechmann, K ^{[1
]}

Rietz, M ^{[1
]}

Rubsam, R ^{[1
]}

Seywerd, H ^{[1
]}

StDenis, R ^{[1
]}

Baumann, I ^{[1
]}

Knopfle, KT ^{[1
]}

机构：

[1] MAX PLANCK INST KERNPHYS,D-69117 HEIDELBERG,GERMANY

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.506647

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of the first irradiation tests of newly designed silicon microstrip detectors pel formed with 21 MeV protons at the Max-Planck-Institut in Heidelberg are presented. The detectors were developed and produced by the semiconductor laboratory of the Max-Planck-Institut in Munich. Novel guard ring structures allow operation of the detectors at voltages exceeding 300 V.

引用

页码：1113 / 1118

页数：6

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