High-performance organic field-effect transistors with low-cost copper electrodes

被引：87

作者：

Di, Chong-an ^{[1
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

Guo, Yunlong ^{[1
]}

Wang, Ying ^{[1
]}

Wu, Weiping ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100080, Peoples R China

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 07期

关键词：

D O I：

10.1002/adma.200701812

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Top-contact Cu source-drain electrodes are used in high-performance organic field-effect transistors based on pentacene or metal phthalocyanine active layers, as schematically depicted in the figure. Despite the low work function of copper, good hole injection is achieved in these devices because of the formation of an ultrathin CuxO layer at the Cu/organic-semiconductor interface.

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收藏

页码：1286 / +

页数：6

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