Effective modification of indium tin oxide for improved hole injection in organic light-emitting devices

被引：26

作者：

Di, Chong-an ^{[1
]}

Yu, Gui ^{[1
]}

Liu, Yunqi ^{[1
]}

Xu, Xinjun ^{[1
]}

Song, Yabin ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2222240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate modification of the indium tin oxide (ITO) surface with an ultrathin layer of hexadecafluorocopper phthalocyanine (F16CuPc) can significantly enhance hole injection as a result of the formation of an interfacial dipole layer. The dipole layer produces a surface potential shift, which reduces the hole injection energy barriers and thus improves the hole injection efficiency. The devices with anode modification exhibit significantly enhanced luminance efficiencies and dramatically decreased operation voltages, compared to devices with the bare ITO anode. The minimum turn-on voltage of 2.6 V and the maximum efficiency of 5.1 cd/A are achieved. (c) 2006 American Institute of Physics.

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页数：3

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