Enhanced performance of organic light-emitting devices by atmospheric plasma treatment of indium tin oxide surfaces

被引：102

作者：

Chan, IM ^{[1
]}

Cheng, WC ^{[1
]}

Hong, FC ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1428624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atmospheric plasma treatment of indium tin oxide (ITO) surfaces has been studied and demonstrated to be the most efficient method in improving the performance of vacuum-deposited double-layer organic light-emitting diode devices, among various plasma treatment methods including low-pressure Ar plasma and low-pressure O-2 plasma treatment. Although with a current-voltage characteristic close to low-pressure O-2 plasma treatment, the atmospheric plasma treatment exhibits a 40% increase of electroluminescence efficiency. X-ray photoelectron spectroscopy results show that the atmospheric plasma treatment increases the work function and reduces the carbon contamination of ITO surfaces. Our results suggest that atmospheric plasma treatment is a cheaper, more convenient, and more efficient method than low-pressure O-2 plasma treatment for improving device performance. (C) 2002 American Institute of Physics.

引用

页码：13 / 15

页数：3

共 16 条

[1] Electroluminescence: enhanced injection using ITO electrodes coated with a self assembled monolayer [J].

Appleyard, SFJ ;

Willis, MR .

OPTICAL MATERIALS, 1998, 9 (1-4) :120-124

[2] LiF/Al cathodes and the effect of LiF thickness on the device characteristics and built-in potential of polymer light-emitting diodes [J].

Brown, TM ;

Friend, RH ;

Millard, IS ;

Lacey, DJ ;

Burroughes, JH ;

Cacialli, F .

APPLIED PHYSICS LETTERS, 2000, 77 (19) :3096-3098

[3] Modification of the hole injection barrier in organic light-emitting devices studied by ultraviolet photoelectron spectroscopy [J].

Ding, XM ;

Hung, LM ;

Cheng, LF ;

Deng, ZB ;

Hou, XY ;

Lee, CS ;

Lee, ST .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2704-2706

[4] Effect of a plasma treatment of ITO on the performance of organic electroluminescent devices [J].

Furukawa, K ;

Terasaka, Y ;

Ueda, H ;

Matsumura, M .

SYNTHETIC METALS, 1997, 91 (1-3) :99-101

[5] Enhanced electron injection in organic electroluminescence devices using an Al/LiF electrode [J].

Hung, LS ;

Tang, CW ;

Mason, MG .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :152-154

[6] Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface [J].

Ishii, M ;

Mori, T ;

Fujikawa, H ;

Tokito, S ;

Taga, Y .

JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) :1165-1167

[7] Improved operational stability of polyfluorene-based organic light-emitting diodes with plasma-treated indium-tin-oxide anodes [J].

Kim, JS ;

Friend, RH ;

Cacialli, F .

APPLIED PHYSICS LETTERS, 1999, 74 (21) :3084-3086

[8] Effects of aquaregia treatment of indium-tin-oxide substrates on the behavior of double layered organic light-emitting diodes [J].

Li, F ;

Tang, H ;

Shinar, J ;

Resto, O ;

Weisz, SZ .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2741-2743

[9] Analysis of current-voltage characteristics of organic light emitting diodes having a LiF/Al cathode and an Al-hydroxyquinoline/diamine junction [J].

Matsumura, M ;

Jinde, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2872-2874

[10] Surface oxidation activates indium tin oxide for hole injection [J].

Milliron, DJ ;

Hill, IG ;

Shen, C ;

Kahn, A ;

Schwartz, J .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :572-576

← 1 2 →