Some structural studies on successive ionic layer adsorption and reaction (SILAR)-deposited US thin films

被引：61

作者：

Lokhande, CD ^{[1
]}

Sankapal, BR

Pathan, HM

Muller, M

Giersig, M

Tributsch, H

机构：

[1] Shivaji Univ, Dept Phys, Thin Film Phys Lab, Kolhapur 416004, Maharashtra, India

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 2001年 / 181卷 / 3-4期

关键词：

thin films; CdS; SILAR; film characterization;

D O I：

10.1016/S0169-4332(01)00392-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cadmium sulfide thin films have been deposited by a simple and inexpensive successive ionic layer adsorption and reaction (SILAR) method from aqueous as well as non-aqueous media. The CdS films have been characterized by X-ray diffraction (XRD), scanning electron microcopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray analyses (EDAX) and Rutherford back scattering (RBS). X-ray studies showed the hexagonal crystal structure of US films. The surface morphology is found to be smooth and dense from SEM images for both the films. High resolution TEM (HRTEM) showed that the films consist of nanoparticles. The EDAX and RBS studies showed stoichiornetric formation of US from both the media. Inclusion of oxygen is observed from RBS studies. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：277 / 282

页数：6

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