Scanning tunneling microscopy investigation at high temperatures of islands and holes on Si(111)7x7 in real time:: evidence for diffusion-limited decay

被引：7

作者：

Hildebrandt, S

Kraus, A

Kulla, R

Wilhelmi, G

Hanbücken, M

Neddermeyer, H ^{[1
]}

机构：

[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany

[2] VCH Verlag Berlin GmbH, Phys Status Solid Wiley, D-130086 Berlin, Germany

[3] Ruhr Univ Bochum, Inst Expt Phys, D-44780 Bochum, Germany

[4] CNRS, CRMC2, F-13288 Marseille, France

来源：

SURFACE SCIENCE | 2001年 / 486卷 / 1-2期

关键词：

silicon; scanning tunneling microscopy; surface diffusion; surface structure; morphology; roughness; and topography;

D O I：

10.1016/S0039-6028(01)01054-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The annealing behavior of hole- and island-like nanostructures fabricated in situ in the scanning tunneling microscope on Si(111)7 x 7 has been investigated in the range from 720 to 830 K. In contrast to previous work, the analysis reveals diffusion-controlled decay kinetics to be described by a (t(0) - t)(2/3) law, From the temperature dependence of the diffusion coefficient, we obtain an activation energy of(1.49 +/- 0.12) eV which is discussed in terms of a diffusion barrier for the moving adatoms. The comparison of the decay between hole and island structures suggest a missing Ehrlich-Schwoebel barrier for hole filling. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：24 / 32

页数：9

共 29 条

[1] VARIATIONAL PHASE-SPACE THEORY STUDIES OF SILICON-ATOM DIFFUSION ON RECONSTRUCTED SI(111)-(7X7) SURFACES [J].