Electronic structure of AlxGa1-xAs and GaPxAs1-x alloys modified virtual crystal approximation calculation using sp(3)s(*) band structures

被引：20

作者：

Ferhat, M

Bouhafs, B

Zaoui, A

Certier, M

Kehlifa, B

Aourag, H

机构：

[1] UNIV SIDI BEL ABBES,DEPT PHYS,COMPUTAT MAT SCI LAB,ALGIERS 22000,ALGERIA

[2] UNIV METZ,LSOM,F-57078 METZ 3,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1996年 / 41卷 / 03期

关键词：

modified virtual crystal approximation calculation; sp(3)s(*) tight-binding model; AlxGal-xAs; Schrodinger equation;

D O I：

10.1016/S0921-5107(96)01727-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple light-binding sp(3)s* model, which incorporates compositional disorder as an effective potential, is used for the calculations of the electronic structures of the semiconducting alloys AlxGa1-xAs and GaPxAs1-x. Our results for various interesting quantities, including band-gap horizons and crossover of the band gaps of these two systems, are compared with the available data; a good agreement is found. Copyright (C) 1996 Elsevier Science S.A.

引用

页码：304 / 309

页数：6

共 37 条

[1] EFFECT OF DISORDER ON DIRECT AND INDIRECT BAND-GAPS OF SEMICONDUCTOR ALLOYS [J].