ENERGY-BAND STRUCTURE CALCULATION OF GEXSN1-X AND SIXSN1-X ALLOYS

被引：23

作者：

BOUHAFS, B

BENKABOU, F

FERHAT, M

KHELIFA, B

DUFOUR, JP

AOURAG, H

机构：

[1] Computational Materials Science Laboratory, Physics Department, University of Sidi-Bel-Abbes

来源：

INFRARED PHYSICS & TECHNOLOGY | 1995年 / 36卷 / 06期

关键词：

D O I：

10.1016/1350-4495(95)00039-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Starting from band structures of the constituent materials, the electronic band structure of the semiconducting alloys GexSn1-x and SixSn1-x are calculated by the empirical pseudopotential method using a corrected virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential. Various quantities, including the bowing parameter of the fundamental band gap, the energies of several optical gaps, and the crossover of the band gaps are predicted.

引用

页码：967 / 972

页数：6

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