High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere

被引：21

作者：

Pajot, B

Clerjaud, B

Xu, ZJ

机构：

[1] Univ Paris 07, UMR 7588, GPS, F-75251 Paris 05, France

[2] Univ Paris 06, LOS, UMR 7601, F-75252 Paris 05, France

[3] Acad Sinica, Inst Semicond, Beijing 100093, Peoples R China

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.59.7500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-frequency vibrational modes have been observed at liquid-helium temperature in silicon samples grown in a H-2 or D-2 atmosphere. The highest-frequency ones are due to the overtones and combination modes of SiH fundamentals. Others are CH modes due to (C,H) complexes, but the simultaneous presence of NH modes due to (N,H) complexes cannot be excluded. The present results seem to show also the existence of centers including both SiH and CH or NH bonds. One sharp mode at 4349 cm-l is related to a weak SiH fundamental at 2210 cm(-1). The related center is ascribed to a vacancy fully decorated with hydrogen with a nearest-neighbor C atom. [S0163-1829(99)00911-X].

引用

页码：7500 / 7506

页数：7

共 32 条

[1] THE ISOTOPE STUDY OF THE SI-H ABSORPTION PEAKS IN THE FZ-SI GROWN IN HYDROGEN ATMOSPHERE [J].