A gate electrode fabrication technique using dichlorosilane-based W-polycide with monosilane-based WSix nucleation layer

被引：9

作者：

Kim, HS ^{[1
]}

Lee, SD ^{[1
]}

Lee, SM ^{[1
]}

Yeo, IS ^{[1
]}

Lee, SK ^{[1
]}

机构：

[1] Hyundai Elect Ind Co Ltd, Semicond Adv Res Div, Kyungki Do 467701, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 02期

关键词：

D O I：

10.1149/1.1390744

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A fabrication technique involving WSix on a phosphorus-doped silicon (W-polycide) stack with a dichlorosilane-based WSix (DCS WSix) film using an in situ high temperature monosilane-based WSix nucleation step has been developed for the gate electrode application in ultralarge scale integration metal-oxide-semiconductor devices. The composition of the interface between DCS WSix and phosphorus-doped polysilicon is easily controlled by adopting this technique. The DCS WSix film in this W-polycide stack shows a vertically uniform composition profile, and the approach enhances the thermal stability without degradation of the gate oxide integrity. (C) 1999 The Electrochemical Society. S1099- 0062( 98) 08- 115- 2. All rights reserved.

引用

页码：88 / 90

页数：3

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