Direct SiO2/beta-SiC(100)3x2 interface formation from 25 degrees C to 500 degrees C

We investigate the beta-SiC(100)3X2 surface oxidation by core level and valence band photoemission spectroscopies using synchrotron radiation. Low molecular O-2 exposures on the (3X2) surface reconstruction leads to direct SiO2/beta-SiC(100)3X2 interface formation already at room temperature (RT). To our best knowledge, this is the first example of RT oxidation leading directly to dominant silicon dioxide growth by O-2 chemisorption only. The amount of SiO2 is enhanced when the surface temperature is raised by few hundred degrees only (<500 degrees C) during O-2 exposures leading to ''bulk oxide'' formation already at small thicknesses. These findings are also relevant in low-temperature semiconductor oxide processing. (C) 1996 American Institute of Physics.