Connection between hydrogen plasma treatment and etching of amorphous phase in the layer-by-layer technique with very high frequency plasma excitation

被引：10

作者：

Vetterl, O ^{[1
]}

Hapke, P ^{[1
]}

Houben, L ^{[1
]}

Finger, F ^{[1
]}

Carius, R ^{[1
]}

Wagner, H ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 05期

关键词：

D O I：

10.1063/1.369616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The formation of microcrystalline silicon was investigated employing the layer-by-layer technique with very high frequency plasma excitation. Etching of the deposited layers was found to be a dominant effect during hydrogen plasma treatment. Microcrystalline growth occurred when the thickness of the deposited layer was reduced to a certain value in each cycle. The etching stopped when a noticeable crystalline volume fraction was produced; for long hydrogen treatment times no film growth was observed. (C) 1999 American Institute of Physics. [S0021-8979(99)06404-X].

引用

页码：2991 / 2993

页数：3

共 12 条

[1] EFFECTS OF HYDROGEN-ATOMS ON THE NETWORK STRUCTURE OF HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON THIN-FILMS [J].

ASANO, A .

APPLIED PHYSICS LETTERS, 1990, 56 (06) :533-535

[2]

HEINTZE M, 1993, J NON-CRYST SOLIDS, V166, P985, DOI 10.1016/0022-3093(93)91163-W

[3] Morphological and crystallographic defect properties of microcrystalline silicon: a comparison between different growth modes [J].

Houben, L ;

Luysberg, M ;

Hapke, P ;

Vetterl, O ;

Finger, F ;

Carius, R ;

Wagner, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 :896-900

[4] Structure and growth of hydrogenated microcrystalline silicon: Investigation by transmission electron microscopy and Raman spectroscopy of films grown at different plasma excitation frequencies [J].

Luysberg, M ;

Hapke, P ;

Carius, R ;

Finger, F .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1997, 75 (01) :31-47

[5] FORMATION KINETICS AND CONTROL OF MICROCRYSTALLITE IN MU-C-SI-H FROM GLOW-DISCHARGE PLASMA [J].

MATSUDA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :767-774

[6] ROLES OF ATOMIC-HYDROGEN IN CHEMICAL ANNEALING [J].

NAKAMURA, K ;

YOSHINO, K ;

TAKEOKA, S ;

SHIMIZU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2A) :442-449

[7] ROLE OF HYDROGEN-ATOMS IN THE FORMATION PROCESS OF HYDROGENATED MICROCRYSTALLINE SILICON [J].

NOMOTO, K ;

URANO, Y ;

GUIZOT, JL ;

GANGULY, G ;

MATSUDA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (08) :L1372-L1375

[8] Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon [J].

Saitoh, K ;

Kondo, M ;

Fukawa, M ;

Nishimiya, T ;

Matsuda, A ;

Futako, W ;

Shimizu, I .

APPLIED PHYSICS LETTERS, 1997, 71 (23) :3403-3405

[9] ROLE OF ATOMIC-HYDROGEN DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON IN THE CHEMICAL ANNEALING [J].

SHIRAI, H ;

HANNA, J ;

SHIMIZU, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4B) :L679-L682

[10]

SOLOMON I, 1993, J NON-CRYST SOLIDS, V166, P989, DOI 10.1016/0022-3093(93)91164-X

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