Properties of graphene produced by the high pressure-high temperature growth process

被引:51
作者
Parvizi, F. [1 ]
Teweldebrhan, D. [1 ]
Ghosh, S. [1 ]
Calizo, I. [1 ]
Balandin, A. A. [1 ,2 ]
Zhu, H. [3 ]
Abbaschian, R. [4 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Nandevice Lab, Riverside, CA 92521 USA
[2] Univ Calif Riverside, Bourns Coll Engn, Mat Sci & Engn Program, Riverside, CA 92521 USA
[3] Gemesis Corp, Sarasota, FL 34240 USA
[4] Univ Calif Riverside, Dept Mech Engn, Riverside, CA 92521 USA
关键词
D O I
10.1049/mnl:20070074
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The authors report on a new method for the synthesis of graphene, a mono-layer of carbon atoms arranged in a honey comb lattice, and the assessment of the properties of obtained graphene layers using micro-Raman characterisation. Graphene was produced by a high pressure-high temperature (HPHT) growth process from the natural graphitic source material by utilising the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon-silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T + D and 2D bands in the Raman spectra under the 488 nm laser excitation indicate that the HPHT technique is capable of producing high-quality large-area single-layer graphene with a low defect density. The disorder-induced D peak similar to 1359 cm(-1) while very strong in the initial graphitic material is completely absent in the graphene layers. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.
引用
收藏
页码:29 / 34
页数:6
相关论文
共 35 条
[1]   High pressure-high temperature growth of diamond crystals using split sphere apparatus [J].
Abbaschian, R ;
Zhu, H ;
Clarke, C .
DIAMOND AND RELATED MATERIALS, 2005, 14 (11-12) :1916-1919
[2]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[3]   DIRECT CONVERSION OF GRAPHITE TO DIAMOND IN STATIC PRESSURE APPARATUS [J].
BUNDY, FP .
SCIENCE, 1962, 137 (3535) :1057-&
[4]   Temperature dependence of the Raman spectra of graphene and graphene multilayers [J].
Calizo, I. ;
Balandin, A. A. ;
Bao, W. ;
Miao, F. ;
Lau, C. N. .
NANO LETTERS, 2007, 7 (09) :2645-2649
[5]   Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices [J].
Calizo, I. ;
Miao, F. ;
Bao, W. ;
Lau, C. N. ;
Balandin, A. A. .
APPLIED PHYSICS LETTERS, 2007, 91 (07)
[6]  
CALIZO I, 2008, J PHYS C IN PRESS
[7]   The effect of substrates on the Raman spectrum of graphene: Graphene-on-sapphire and graphene-on-glass [J].
Calizo, Irene ;
Bao, Wenzhong ;
Miao, Feng ;
Lau, Chun Ning ;
Balandin, Alexander A. .
APPLIED PHYSICS LETTERS, 2007, 91 (20)
[8]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[9]   Gate-tunable graphene spin valve [J].
Cho, Sungjae ;
Chen, Yung-Fu ;
Fuhrer, Michael S. .
APPLIED PHYSICS LETTERS, 2007, 91 (12)
[10]   Preparation and characterization of graphene oxide paper [J].
Dikin, Dmitriy A. ;
Stankovich, Sasha ;
Zimney, Eric J. ;
Piner, Richard D. ;
Dommett, Geoffrey H. B. ;
Evmenenko, Guennadi ;
Nguyen, SonBinh T. ;
Ruoff, Rodney S. .
NATURE, 2007, 448 (7152) :457-460