Quantum-dot resonant-cavity separate absorption, charge, and multiplication avalanche photodiode operating at 1.06 μm

被引：32

作者：

Nie, H ^{[1
]}

Baklenov, O ^{[1
]}

Yuan, P ^{[1
]}

Lenox, C ^{[1
]}

Streetman, BG ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 07期

基金：

美国国家科学基金会;

关键词：

avalanche photodiode; Nd : YAG; quantum dots; resonant-cavity;

D O I：

10.1109/68.681300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the design, fabrication and performance of a quantum-dot (QD) resonant-cavity separate absorption, charge, and multiplication avalanche photodiode (APD), The device was grown on GaAs using molecular beam epitaxy and was designed to detect light near 1.06 mu m. The absorbing region consists of a stack of five self-assembled, QD layers, that mere formed by the deposition of six monolayers of In0.5Ga0.5As, with GaAs spacer layers. The peak efficiency at 1.06 mu m is 57% with a spectral bandwidth of 1.3 nm, The photodiode exhibites low dark current, low multiplication noise (k < 0.3), goad gain characteristics and a low-breakdown voltage (similar to 15 V), which is much lower than that of Si-based APD's operating at 1.06 mu m.

引用

页码：1009 / 1011

页数：3

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