New transparent conducting ZnO-In2O3-SnO2 thin films prepared by magnetron sputtering

被引：74

作者：

Minami, T ^{[1
]}

Kakumu, T ^{[1
]}

Shimokawa, K ^{[1
]}

Takata, S ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Nonoichi, Ishikawa 921, Japan

来源：

THIN SOLID FILMS | 1998年 / 317卷 / 1-2期

关键词：

thin films; magnetron sputtering; oxide;

D O I：

10.1016/S0040-6090(97)00547-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

New multicomponent ZnO-In2O3-SnO2 system and new In4Sn3O12 transparent conducting oxide thin films have been prepared by RF magnetron sputtering. The In4Sn3O12 films, or In2O3-SnO2 films with a Sn/(In + Sn) atomic ratio around 0.5, showed a resistivity of 3-4 x 10(-4) Omega cm and an average transmittance above 80% in the visible range when they were prepared at substrate temperatures of room temperature to 350 degrees C. In addition, the electrical properties of multicomponent Zn2In2O5-ZnSnO3 films changed monotonically as the ZnSnO3 content was varied. (C) 1998 Elsevier Science S.A.

引用

页码：318 / 321

页数：4

共 12 条

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