Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging

被引：1291

作者：

Qazilbash, M. M. ^{[1
]}

Brehm, M.

Chae, Byung-Gyu

Ho, P. -C.

Andreev, G. O.

Kim, Bong-Jun

Yun, Sun Jin

Balatsky, A. V.

Maple, M. B.

Keilmann, F.

Kim, Hyun-Tak

Basov, D. N.

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Max Planck Inst Biochem, Abt Mol Strukturbiol, D-82152 Munich, Germany

[3] Ctr Nanosci, D-82152 Munich, Germany

[4] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea

[5] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[6] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA

来源：

SCIENCE | 2007年 / 318卷 / 5857期

关键词：

D O I：

10.1126/science.1150124

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator- to- metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide in which the metallic state can be induced by increasing temperature. Scanning near- field infrared microscopy allows us to directly image nanoscale metallic puddles that appear at the onset of the insulator- to- metal transition. In combination with far- field infrared spectroscopy, the data reveal the Mott transition with divergent quasi- particle mass in the metallic puddles. The experimental approach used sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.

引用

页码：1750 / 1753

页数：4

共 31 条

[1] RESISTIVITY OF THE HIGH-TEMPERATURE METALLIC PHASE OF VO2 [J].

ALLEN, PB ;

WENTZCOVITCH, RM ;

SCHULZ, WW ;

CANFIELD, PC .

PHYSICAL REVIEW B, 1993, 48 (07) :4359-4363

[2] Evidence of a pressure-induced metallization process in monoclinic VO2 [J].

Arcangeletti, E. ;

Baldassarre, L. ;

Di Castro, D. ;

Lupi, S. ;

Malavasi, L. ;

Marini, C. ;

Perucchi, A. ;

Postorino, P. .

PHYSICAL REVIEW LETTERS, 2007, 98 (19)

[3] Electrodynamics of high-Tc superconductors [J].

Basov, DN ;

Timusk, T .

REVIEWS OF MODERN PHYSICS, 2005, 77 (02) :721-779

[4] Sum rules and electrodynamics of high-Tc cuprates in the pseudogap state -: art. no. 054516 [J].

Basov, DN ;

Singley, EJ ;

Dordevic, SV .

PHYSICAL REVIEW B, 2002, 65 (05) :1-7

[5] Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404 [J].

Biermann, S ;

Poteryaev, A ;

Lichtenstein, AI ;

Georges, A .

PHYSICAL REVIEW LETTERS, 2005, 94 (02) :1-4

[6] Application of Gutzwiller's variational method to the metal-insulator transition [J].

Brinkman, W. F. ;

Rice, T. M. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4302-4304

[7]

CARR GL, 1985, INFRARED MILLIMETER, V13

[8] Highly oriented VO2 thin films prepared by sol-gel deposition [J].

Chae, BG ;

Kim, HT ;

Yun, SJ ;

Kim, BJ ;

Lee, YW ;

Youn, DH ;

Kang, KY .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (01) :C12-C14

[9] Surface versus bulk characterizations of electronic inhomogeneity in a VO2 thin film [J].

Chang, Y. J. ;

Yang, J. S. ;

Kim, Y. S. ;

Kim, D. H. ;

Noh, T. W. ;

Kim, D.-W. ;

Oh, E. ;

Kahng, B. ;

Chung, J.-S. .

PHYSICAL REVIEW B, 2007, 76 (07)

[10] Mid-infrared properties of a VO2 film near the metal-insulator transition [J].

Choi, HS ;

Ahn, JS ;

Jung, JH ;

Noh, TW ;

Kim, DH .

PHYSICAL REVIEW B, 1996, 54 (07) :4621-4628

← 1 2 3 4 →