Transparent organic light-emitting diodes consisting of a metal oxide multilayer cathode

被引:82
作者
Ryu, Seung Yoon [1 ,2 ]
Noh, Joo Hyon [1 ]
Hwang, Byoung Har [1 ]
Kim, Chang Su [1 ]
Jo, Sung Jin [1 ]
Kim, Jong Tae [1 ]
Hwang, Hyeon Seok [1 ]
Baik, Hong Koo [1 ]
Jeong, Hee Seong [2 ]
Lee, Chang Ho [2 ]
Song, Seung Yong [2 ]
Choi, Seung Ho [2 ]
Park, Si Young [2 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Samsung SDI Co Ltd, AMOLED Business Team, Yongin 449577, Gyeonggi Do, South Korea
关键词
D O I
10.1063/1.2835044
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have developed a semitransparent, multilayered cathode of indium tin oxide (ITO)/Ag/tungsten oxide (WO3) for transparent organic light-emitting diodes. The device showed a weak negative differential resistance (NDR), until the operating voltage of 8 V was reached. NDR was due to the resonant tunneling by both the quantum barrier and quantum well. The silver oxide (Ag2O) on the Ag metal was confirmed by x-ray photoelectron spectroscopy, and the energy levels of Ag2O were quantized due to the quantum size effect and this produced the resonant tunneling channels. The device using ITO/Ag/WO3 with a LiF/Al bilayer was superior to those devices which only used ITO or WO3, mainly because the out coupling was enhanced by employing a WO3 material, which is much more transparent than ITO. (c) 2008 American Institute of Physics.
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页数:3
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