Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates

被引：34

作者：

Beaur, L. ^{[1
,2
]}

Bretagnon, T. ^{[1
,2
]}

Brimont, C. ^{[1
,2
]}

Guillet, T. ^{[1
,2
]}

Gil, B. ^{[1
,2
]}

Tainoff, D. ^{[3
]}

Teisseire, M. ^{[3
]}

Chauveau, J-M ^{[3
,4
]}

机构：

[1] Univ Montpellier 2, Lab Charles Coulomb, UMR5221, F-34095 Montpellier, France

[2] CNRS, Lab Charles Coulomb, UMR5221, F-34095 Montpellier, France

[3] CRHEA CNRS, F-06560 Valbonne, France

[4] Univ Nice Sophia Antipolis, Dept Phys, F-06102 Nice 2, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 10期

关键词：

II-VI semiconductors - Temperature - Group theory - Optical properties - Reflection - Light polarization - Magnesium compounds - Excitons - Semiconductor quantum wells;

D O I：

10.1063/1.3565969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report growth of high quality ZnO/Zn0.8Mg0.2O quantum wells on M-plane oriented ZnO substrates. The optical properties are studied by reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and clear reflectance structures, as an evidence of good interface morphologies. Signatures of confined excitons built from spin-orbit split-off valence band, analogous to C-exciton in bulk ZnO, are detected using a light polarized along the c-axis. Experiments performed in orthogonal polarization, show confined states analogous to A and B bulk excitons. Envelope function calculations including excitonic interaction nicely match the experimental results. (C) 2011 American Institute of Physics. [doi:10.1063/1.3565969]

引用

页数：3

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