Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry

被引:22
作者
Yang, MJ [1 ]
Moore, WJ
Yang, CH
Wilson, RA
Bennett, BR
Shanabrook, BV
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
[3] Lab Phys Sci, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.370290
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transmission spectra of GaSb have been obtained over a temperature range from 10 to 470 degrees C. Using this information, transmission thermometry is applied to obtain accurate measurements of sample temperature during molecular beam epitaxy growth on GaSb substrates. A GaSb surface reconstruction transition is determined as a function of Sb flux and substrate temperature, establishing a laboratory-independent temperature standard. (C) 1999 American Institute of Physics. [S0021-8979(99)06707-9].
引用
收藏
页码:6632 / 6635
页数:4
相关论文
共 22 条
[1]   Continuous-wave mid-infrared VCSEL's [J].
Bewley, WW ;
Felix, CL ;
Vurgaftman, I ;
Aifer, EH ;
Meyer, JR ;
Goldberg, L ;
Lindle, JR ;
Chow, PH ;
Selvig, E .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (05) :660-662
[2]   IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].
BOLOGNESI, CR ;
CAINE, EJ ;
KROEMER, H .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (01) :16-18
[3]   AlSb/InAs HEMT's for low-voltage, high-speed applications [J].
Boos, JB ;
Kruppa, W ;
Bennett, BR ;
Park, D ;
Kirchoefer, SW ;
Bass, R ;
Dietrich, HB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1869-1875
[4]   0.1μm AlSb/InAs HEMTs with InAs subchannel [J].
Boos, JB ;
Yang, MJ ;
Bennett, BR ;
Park, D ;
Kruppa, W ;
Yang, CH ;
Bass, R .
ELECTRONICS LETTERS, 1998, 34 (15) :1525-1526
[5]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES ON THE MOLECULAR-BEAM-EPITAXIAL GROWTH OF ALSB, GASB, INAS, INASSB, AND GALNASSB ON GASB [J].
CHIU, TH ;
TSANG, WT .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4572-4577
[6]   High performance InAs/Ga1-xInxSb superlattice infrared photodiodes [J].
Fuchs, F ;
Weimer, U ;
Pletschen, W ;
Schmitz, J ;
Ahlswede, E ;
Walther, M ;
Wagner, J ;
Koidl, P .
APPLIED PHYSICS LETTERS, 1997, 71 (22) :3251-3253
[7]  
HELLMAN ES, 1987, J CRYST GROWTH, V81, P39
[8]   Hybrid hall effect device [J].
Johnson, M ;
Bennett, BR ;
Yang, MJ ;
Miller, MM ;
Shanabrook, BV .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :974-976
[9]   COMPARISON OF OPTICAL PYROMETRY AND INFRARED TRANSMISSION MEASUREMENTS ON INDIUM-FREE MOUNTED SUBSTRATES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].
KATZER, DS ;
SHANABROOK, BV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03) :1003-1006
[10]  
KIRILLOV D, DAAL0189C0907