0.1μm AlSb/InAs HEMTs with InAs subchannel

被引:38
作者
Boos, JB [1 ]
Yang, MJ
Bennett, BR
Park, D
Kruppa, W
Yang, CH
Bass, R
机构
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA
关键词
D O I
10.1049/el:19981064
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
AlSb/InAs HEMTs with a 0.1 mu m gate length have been fabricated with a thin InAs subchannel separated from the InAs channel by 30 Angstrom of AlSb. As a result, these HEMTs exhibit improved charge control and a higher current-gain cutoff frequency. The devices have a microwave transconductance of 850 mS/mm and an f(T) of 180 GHz at V-DS = 0.6 V. After subtracting the gate bonding pad capacitance, an f(T) of 250 GHz was obtained.
引用
收藏
页码:1525 / 1526
页数:2
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