0.1μm AlSb/InAs HEMTs with InAs subchannel

被引：38

作者：

Boos, JB ^{[1
]}

Yang, MJ

Bennett, BR

Park, D

Kruppa, W

Yang, CH

Bass, R

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Maryland, Dept Elect Engn, College Pk, MD 20742 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 15期

关键词：

D O I：

10.1049/el:19981064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlSb/InAs HEMTs with a 0.1 mu m gate length have been fabricated with a thin InAs subchannel separated from the InAs channel by 30 Angstrom of AlSb. As a result, these HEMTs exhibit improved charge control and a higher current-gain cutoff frequency. The devices have a microwave transconductance of 850 mS/mm and an f(T) of 180 GHz at V-DS = 0.6 V. After subtracting the gate bonding pad capacitance, an f(T) of 250 GHz was obtained.

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收藏

页码：1525 / 1526

页数：2

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