Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel

被引:7
作者
Zhao, Y [1 ]
Jurkovic, MJ [1 ]
Wang, WI [1 ]
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
关键词
D O I
10.1109/16.658855
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
AlSb/InAs n-channel inverted-structure high electron mobility transistors (i-HERIT's) are realized by incorporating a Si doping sheet into a thin InAs Layer that is embedded within the lower AlSb barrier. i-HEMT's with a 1 mu m x 25 mu m gate size exhibit kink-free operation at room temperature with high drain current, high extrinsic transconductance, and ion gate leakage. Results indicate potential for use in high-speed applications.
引用
收藏
页码:341 / 342
页数:2
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