COMPARISON OF OPTICAL PYROMETRY AND INFRARED TRANSMISSION MEASUREMENTS ON INDIUM-FREE MOUNTED SUBSTRATES DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

Detailed comparisons have been made of temperatures measured by an infrared transmission (IRT) technique and traditional optical pyrometry during the molecular-beam epitaxial growth of GaAs, AlSb, GaSb, and InAs on undoped semi-insulating (SI) GaAs, blackened SI GaAs, and heavily silicon-doped N+ GaAs substrates in indium-free mounts. These comparisons indicate that IRT and optical pyrometry measurements show excellent agreement (+/- 7-degrees-C at most) over the 400-600-degrees-C temperature range, if extreme care is taken to minimize pyrometer errors caused by stray light and coating of the pyrometer window.