GAAS/GAALAS DEVICE STRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY USING INDIUM-FREE MOUNTING TECHNIQUES

被引：9

作者：

THORPE, AJS

MANDEVILLE, P

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 855

页数：3

共 10 条

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[5] UV-OZONE CLEANING OF GAAS FOR MBE [J].

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[6] TWO-DIMENSIONAL ELECTRON-GAS AT NORMAL-ALGAAS/GAAS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY USING DIRECT-RADIATION SUBSTRATE HEATING [J].

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[9] PARTICULATES - AN ORIGIN OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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