VARIATIONS IN SUBSTRATE-TEMPERATURE INDUCED BY MOLECULAR-BEAM EPITAXIAL-GROWTH ON RADIATIVELY HEATED SUBSTRATES

Large changes in substrate temperature that occur during molecular-beam epitaxial growth of materials with energy gaps smaller than that of the substrate have been observed. These changes in temperature, which are not detected by the conventional thermocouple, have been measured by observing the changes in the infrared transmission spectrum of the radiatively heated substrate. In addition to describing the experimental arrangement used for these measurements, the advantages and disadvantages of using this technique for substrate temperature determination are discussed.