Low temperature poly-Si thin film transistor on plastic substrates

被引：35

作者：

Kwon, JY ^{[1
]}

Kim, DY ^{[1
]}

Cho, HS ^{[1
]}

Park, KB ^{[1
]}

Jung, JS ^{[1
]}

Kim, JM ^{[1
]}

Park, YS ^{[1
]}

Noguchi, T ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Giheung, South Korea

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2005年 / E88C卷 / 04期

关键词：

poly-Si; TFT plastic substrate;

D O I：

10.1093/ietele/e88-c.4.667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly-Si TFT (Thin Film transistor) fabricated below 170 degrees C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm(2)/Vsec.

引用

页码：667 / 671

页数：5

共 13 条

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