Self-aligned aluminum top-gate polysilicon thin-film transistors fabricated using laser recrystallization and gas-immersion laser doping

被引：20

作者：

Giust, GK ^{[1
]}

Sigmon, TW ^{[1
]}

机构：

[1] LAWRENCE LIVERMORE NATL LAB,LIVERMORE,CA 94551

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 08期

关键词：

D O I：

10.1109/55.605451

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present electrical results from polysilicon thin-film transistors (TFT's) fabricated using laser-recrystallized channels and gas-immersion laser-doped source-drain regions. A simple, four-level self-aligned aluminum top-gate process is developed to demonstrate the effectiveness of these laser processes in producing TFT's. The source-drain doping process results in source-drain sheet resistances well below 100 Omega/square. TFT held-effect mobilities in excess of 200 cm(2)/Vs are measured for the laser-fabricated unhydrogenated TFT's.

引用

收藏

页码：394 / 396

页数：3

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