Characteristics of ferroelectric Pb(Zr,Ti)O3 films epitaxially grown on CeO2(111)/Si(111) substrates

被引：19

作者：

Moon, BK

Ishiwara, H

Tokumitsu, E

Yoshimoto, M

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

THIN SOLID FILMS | 2001年 / 385卷 / 1-2期

关键词：

epitaxial; ferroelectric; Pb(Zr; Ti)O-3; CeO2; memory window;

D O I：

10.1016/S0040-6090(00)01900-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The sol-gel derived epitaxial growth of ferroelectric Pb(Zr,Ti)O-3 (PZT) films on epitaxial CeO3(111)/Si(111) substrates has been demonstrated. We found that the growth of the PZT(111) film on the substrate is dominated by the cube-on-cube type relationship, where the areal mismatch between the PZT(111) and CeO2(lll) plane was as small as 0.72%. The CeO2(lll) layer was effective in suppressing the interdiffusion between the PZT film and Si. Typical memory window of the Al/PZT(111)/CeO2(111)/Si(lll) structure was 1.54 V, which was determined by the polarization reversal of the PZT(111) layer. The leakage current density and the resistivity measured at 5 V were 2.08 X 10(-7) A/cm(2) and 1.41 X 10(12) Ohm cm, respectively. Therefore, the epitaxial PZT(111)/CeO2(lll)/Si(lll) structure suggests a great potential for application to a metal-ferroelectric-insulator-semiconductor (MFIS) memory device. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：307 / 310

页数：4

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