Longitudinal mode control in 1.3 mu m Fabry-Perot lasers by mode suppression

被引:16
作者
Kozlowski, DA [1 ]
Young, JS [1 ]
England, JMC [1 ]
Plumb, RGS [1 ]
机构
[1] UNIV CAMBRIDGE,CAVENDISH LAB,MICROELECTR RES CTR,CAMBRIDGE CB3 0HE,ENGLAND
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1996年 / 143卷 / 01期
关键词
semiconductor junction lasers; lasing modes; ion beam effects;
D O I
10.1049/ip-opt:19960143
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Localised reflections within the lasing filament of Fabry-Perot lasers cause spectral perturbations. Focused Ga+ ion beam etching can be used to form steep walled pits of submicron size in the lasing filament which give rise to localised reflections with minimal rises in threshold current. Control of both position and depth enables one to sculpture the modal envelope so as to form single mode Fabry-Perot lasers with 30dB of mode suppression and stable with temperature over 30 degrees C with an increase in threshold current of a few milliamps. The authors also report the appearance of an enhanced single spectral line below threshold. Modelling results show that an effective reflectivity can be allocated to the etched pit, and this is an order of magnitude below the cleaved facet reflectivity.
引用
收藏
页码:71 / 76
页数:6
相关论文
共 19 条
[1]   SPONTANEOUS EMISSION, SCATTERING, AND THE SPECTRAL PROPERTIES OF SEMICONDUCTOR DIODE-LASERS [J].
CASSIDY, DT ;
PETERS, FH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (04) :785-791
[2]   ETCHED MIRROR AND GROOVE-COUPLED GALNASP/INP LASER DEVICES FOR INTEGRATED-OPTICS [J].
COLDREN, LA ;
FURUYA, K ;
MILLER, BI ;
RENTSCHLER, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (10) :1679-1688
[3]   DAMAGE-INDUCED SPECTRAL PERTURBATIONS IN MULTILONGITUDINAL-MODE SEMICONDUCTOR-LASERS [J].
DECHIARO, LF .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (11) :1659-1669
[4]   SPECTRAL WIDTH REDUCTION IN MULTILONGITUDINAL MODE LASERS BY SPATIAL LOSS PROFILING [J].
DECHIARO, LF .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1991, 9 (08) :975-986
[5]   EXPERIMENTAL CONFIRMATION OF INTERNAL SCATTERING AS A DOMINANT MECHANISM DETERMINING THE LONGITUDINAL MODE SPECTRA OF 1.3-MU-M SEMICONDUCTOR DIODE-LASERS [J].
HAYWARD, JE ;
CASSIDY, DT .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1992, 9 (07) :1151-1157
[6]  
HENRY CH, 1982, IEEE J QUANTUM ELECT, V20, P733
[7]   SINGLEMODE 1.3-MU-M FABRY-PEROT LASERS BY MODE SUPPRESSION [J].
KOZLOWSKI, DA ;
YOUNG, JS ;
ENGLAND, JMC ;
PLUMB, RGS .
ELECTRONICS LETTERS, 1995, 31 (08) :648-650
[8]  
KOZLOWSKI DA, 1995, IN PRESS IEEE PHOTON
[9]   PARTLY GAIN-COUPLED 1.55-MU-M STRAINED-LAYER MULTI-QUANTUM-WELL DFB LASERS [J].
LI, GP ;
MAKINO, T ;
MOORE, R ;
PUETZ, N ;
LEONG, KW ;
LU, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1736-1742
[10]   1.55 MU-M INDEX GAIN COUPLED DFB LASERS WITH STRAINED LAYER MULTIQUANTUM-WELL ACTIVE GRATING [J].
LI, GP ;
MAKINO, T ;
MOORE, R ;
PUETZ, N .
ELECTRONICS LETTERS, 1992, 28 (18) :1726-1727