X-ray spectroscopic study of the electronic structure of visible-light responsive N-, C- and S-doped TiO2

被引：117

作者：

Chen, Xiaobo ^{[2
]}

Glans, Per-Anders ^{[1
,3
]}

Qiu, Xiaofeng ^{[2
]}

Dayal, Smita ^{[2
]}

Jennings, Wayne D. ^{[4
]}

Smith, Kevin E. ^{[3
]}

Burda, Clemens ^{[2
]}

Guo, Jinghua ^{[1
]}

机构：

[1] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[2] Case Western Reserve Univ, Dept Chem, Ctr Chem Dynam & Nanomat Res, Cleveland, OH 44106 USA

[3] Boston Univ, Dept Phys, Boston, MA 02215 USA

[4] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2008年 / 162卷 / 02期

基金：

美国国家科学基金会;

关键词：

electronic structure; doped TiO2; X-ray absorption; X-ray emission; X-ray photoelectron;

D O I：

10.1016/j.elspec.2007.09.002

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The electronic origins of the visible-light response of N-, C- and S-doped TiO2 have been studied using X-ray absorption, X-ray emission, and X-ray photoelectron spectroscopies. New electronic states are observed in the bulk band gap, above the valence band edge of pure TiO2, which can be directly related to the visible-light absorption of the N-, C- and S-doped TiO2 materials. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：67 / 73

页数：7

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