Mechanism for the increase of indium-tin-oxide work function by O2 inductively coupled plasma treatment

被引：114

作者：

Lee, KH ^{[1
]}

Jang, HW

Kim, KB

Tak, YH

Lee, JL

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea

[2] LG Elect Inc, Kumi 730030, Kyungbuk, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 02期

关键词：

D O I：

10.1063/1.1633351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of O-2 inductively coupled plasma (ICP) treatment on the chemical composition and work function of indium-tin-oxide (ITO) surface were investigated. Synchrotron radiation photoemission spectroscopy showed that the O-2 ICP treatment resulted in the increase of the ITO work function by 0.8 eV. Incorporation of oxygen atoms near the ITO surface during the ICP treatment induced a peroxidic ITO surface, increasing the work function. The enhanced oxidation of a thin Ni overlayer on the O-2-ICP-treated sample suggests that preventing the migration of oxygen atoms into the active region of organic light-emitting diodes is important for improving device lifetime. (C) 2004 American Institute of Physics.

引用

页码：586 / 590

页数：5

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