90° domain wall relaxation and frequency dependence of the coercive field in the ferroelectric switching process

被引:117
作者
Lente, MH [1 ]
Picinin, A [1 ]
Rino, JP [1 ]
Eiras, JA [1 ]
机构
[1] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP, Brazil
关键词
D O I
10.1063/1.1645980
中图分类号
O59 [应用物理学];
学科分类号
摘要
The mechanisms involved in the polarization switching process in soft and hard Pb(Zr-53,Ti-47)O-3 (PZT) bulk ceramics were investigated through the dependency of the hysteresis loop on the frequency. In order to determine the influence of the defects on the domain switching dynamics, the samples were characterized in the virgin state and after a fatigue or a depinning process. The frequency dependence of the polarization revealed a strong relaxation of the 90degrees domain walls at similar to100 Hz. The results also revealed a strong influence of the kind of defect and their distribution in the ferroelectric matrix on the domain switching dynamics, which were reflected in the frequency dependence of the coercive field and the percentage of the backswitching. Initially, it was observed that the frequency dependence of the coercive field for the soft and the hard PZT in the virgin state had just one rate of change per decade in the entire frequency range investigated, which is the standard behavior found in the literature. However, after the fatigue or the depinning process, two rates of changes were noticed. Consequently, evidence of an upper-frequency limit for the coercive field changes was found. The percentage of the backswitching and its behavior for the soft PZT was almost independent of the fatigue state in the entire frequency range investigated. Nevertheless, for the hard PZT, an opposite behavior was verified. The reorientation of the domains was modeled as occurring in a viscous medium where several forces, such as viscous and restoring forces, act on them. (C) 2004 American Institute of Physics.
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页码:2646 / 2653
页数:8
相关论文
共 57 条
[41]  
SCOTT JF, 1998, FERROELECTR REV, V1, P3
[42]   Activation field of ferroelectric (Pb,La)(Zr,Ti)O-3 thin film capacitors [J].
Song, TK ;
Aggarwal, S ;
Prakash, AS ;
Yang, B ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 1997, 71 (15) :2211-2213
[43]  
TAKAHASHI S, 1982, FERROELECTRICS, V41, P277
[44]   Fatigue anisotropy in single crystal Pb(Zn1/3Nb2/3)O3-PbTiO3 [J].
Takemura, K ;
Ozgul, M ;
Bornand, V ;
Trolier-McKinstry, S ;
Randall, CA .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7272-7277
[45]   DEPENDENCE OF THE CRYSTAL-STRUCTURE ON PARTICLE-SIZE IN BARIUM-TITANATE [J].
UCHINO, K ;
SADANAGA, E ;
HIROSE, T .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (08) :1555-1558
[46]  
Uchino K., 2000, FERROELECTRIC DEVICE
[47]   PIEZOELECTRIC PROPERTIES OF MODIFIED PBTIO3 CERAMICS [J].
UEDA, I ;
IKEGAMI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (03) :236-&
[49]   Random-field model for ferroelectric domain dynamics and polarization reversal [J].
Viehland, D ;
Chen, YH .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6696-6707
[50]   Kinetics of polarization reversal in 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3:: Heterogeneous nucleation in the vicinity of quenched random fields [J].
Viehland, D ;
Li, JF .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (06) :2995-3003