Split-Gate Organic Field Effect Transistors: Control Over Charge Injection and Transport

被引：38

作者：

Hsu, Ben B. Y. ^{[1
]}

Namdas, Ebinazar B. ^{[1
]}

Yuen, Jonathan D. ^{[1
]}

Cho, Shinuk ^{[1
]}

Samuel, D. W. ^{[2
]}

Heeger, Alan J. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[2] Univ St Andrews N Haugh, Organ Semicond Ctr SUPA, Sch Phys & Astron, St Andrews KY16 9SS, Fife, Scotland

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 41期

基金：

美国国家科学基金会;

关键词：

EMISSION; CIRCUITS;

D O I：

10.1002/adma.201001509

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A split-gate field effect transistor containing four electrodes, source, drain, two gates allows enhanced transport for specific carrier species and separate control of carrier polarity over two gate regimes. The device can be operated as a transistor or a diode by controlling gate biases.

引用

页码：4649 / 4653

页数：5

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