Highly reliable thin hafnium oxide gate dielectric

被引：12

作者：

Kang, LG ^{[1
]}

Lee, BH ^{[1
]}

Qi, WJ ^{[1
]}

Jeon, YJ ^{[1
]}

Nieh, R ^{[1
]}

Gopalan, S ^{[1
]}

Onishi, K ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES | 2000年 / 592卷

关键词：

D O I：

10.1557/PROC-592-81

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2 is the one of the potential high-k dielectrics for replacing SiO2 as a gate dielectric. HfO2 is thermodynamically stable when in direct contact with Si and has a reasonable band gap (similar to5.65eV). In this study, MOS capacitors (Pf/HfO2/Si) were fabricated by depositing HfO2 using reactive DC magnetron sputtering in the range of 33 similar to 135 Angstrom followed by Pt deposition. During the HfO2 deposition, Oz flow was modulated to control interface quality and to suppress interfacial layer growing. By optimizing the HfO2 deposition process, equivalent oxide thickness (EOT) can be reduced down to similar to 11.2 Angstrom with the leakage current as low as 1X10(-2) A/cm(2) at +1.0V and negligible frequency dispersion. HfO2 films also show excellent breakdown characteristics and negligible hysteresis after high temperature annealing. From the high resolution TEM. there is a thin interfacial layer after annealing, suggesting a composite of Si-Hf-O with a dielectric constant of approximate to 2 X K SiO2.

引用

页码：81 / 86

页数：6

共 9 条

[1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].