InP-based all-epitaxial 1.3-μm VCSELs with selectively etched AlInAs apertures and Sb-based DBRs

被引：12

作者：

Asano, T ^{[1
]}

Feezell, D ^{[1
]}

Koda, R ^{[1
]}

Reddy, MHM ^{[1
]}

Buell, DA ^{[1
]}

Huntington, AS ^{[1
]}

Hall, E ^{[1
]}

Nakagawa, S ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn & Mat, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2003年 / 15卷 / 10期

关键词：

optical fiber communication; quantum well lasers; semiconductor device fabrication; semiconductor lasers; surface-emitting lasers; VERTICAL-CAVITY LASERS; SURFACE-EMITTING LASERS; CONTINUOUS-WAVE OPERATION; LOW-THRESHOLD OXIDE; 1.3; MU-M; ROOM-TEMPERATURE;

D O I：

10.1109/LPT.2003.817987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, InP-based all-epitaxially grown 1.3-mum vertical-cavity surface-emitting lasers with lattice-matched Sb-based distributed Bragg reflectors and AlInAs etched apertures. The minimum threshold current and voltage under pulsed operation were 3 mA and 2.0 V, respectively. The thermal impedance was as low as 1.2 K/mW without heat sinking. implementation of the AlInAs etched aperture was quite effective in improving the injection efficiency and reducing the internal loss, resulting in improved differential efficiency.

引用

页码：1333 / 1335

页数：3

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