Molecular beam epitaxial growth of monolithic 1.55 μm vertical cavity surface emitting lasers with AlGaAsSb/AlAsSb Bragg mirrors

被引：10

作者：

Almuneau, G ^{[1
]}

Hall, E

Nakagawa, S

Kim, JK

Lofgreen, D

Sjölund, O

Luo, C

Clarke, DR

English, JH

Coldren, LA

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.591436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The molecular bt arn epitaxy and the characterization of single-step grown long wavelength vertical cavity surface emitting lasers (LW-VCSEL) are reported. The devices were fabricated using highly reflective AlGaAsSb/AlAsSb distributed Bragg reflectors (DBRs), and an AlGaInAs-based active region embedding a tunnel (or Esaki) junction. The VCSELs operate at 1.55 mu m at room temperature with a threshold current density of 1.4 kA/cm(2). Characterization of the VCSELs and DBRs' thermal and electrical properties is presented. Major improvement on the voltage drop in an InGaAs capped DBR is demonstrated, resulting in a value as low as 40 mV/pair. (C) 2000 American Vacuum Society.

引用

页码：1601 / 1604

页数：4

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