Selectively etched undercut apertures in AlAsSb-based VCSELs

被引：10

作者：

Hall, E ^{[1
]}

Nakagawa, S ^{[1
]}

Almuneau, G ^{[1
]}

Kim, JK ^{[1
]}

Coldren, LA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 02期

关键词：

quantum-well lasers; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/68.910499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Apertures were formed in single-growth, AsSb-based, long-wavelength (1.55 mum) vertical-cavity surface-emitting lasers by laterally etching the active region. The materials contrast between the AlAsSb-based mirrors and the AlInGaAs-based active region leads to a high selectivity for the etch, allowing long apertures to be formed with minimal etching of the mirrors, Lasers showing reduced threshold currents and increased efficiencies were demonstrated using these apertures.

引用

页码：97 / 99

页数：3

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