Superconducting and normal-state properties of heavily hole-doped diamond

被引：74

作者：

Sidorov, VA ^{[1
]}

Ekimov, EA

Stishov, SM

Bauer, ED

Thompson, JD

机构：

[1] Russian Acad Sci, Vereshchagin Inst High Pressure Phys, Troitsk 142190, Moscow Region, Russia

[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.71.060502

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of the specific heat, Hall effect,.upper critical field, and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure, high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set of materials parameters that favor a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism at high hole doping.

引用

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