High-efficiency non-resonant cavity light-emitting diodes

被引：21

作者：

Windisch, R

Heremans, P

Dutta, B

Kuijk, M

Schoberth, S

Kiesel, P

Dohler, GH

Borghs, G

机构：

[1] IMEC, B-3001 Heverlee, Belgium

[2] Free Univ Brussels, Dept ETRO LAMI, B-1050 Brussels, Belgium

[3] Univ Erlangen Nurnberg, Inst Tech Phys 1, D-91058 Erlangen, Germany

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 11期

关键词：

D O I：

10.1049/el:19980810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

860nm surface-textured thin-film GaAs light-emitting diodes have been fabricated with a novel design which includes a selectively oxidised AlGaAs layer for current confinement. The highest reported external quantum efficiencies for injection currents below 0.3mA are obtained. Furthermore, 20% external quantum efficiency for diodes with a current aperture of 12 mu m is reported.

引用

页码：1153 / 1155

页数：3

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